Global consumer electronics market revenues are set to break through the one trillion dollar barrier in 2024. This is a significant milestone for the industry and comes at a time of pivotal change and innovation.

The Q3 2023 update of the OECD Fixed Broadband Price Benchmarking service is now available for download and includes over 2,600 fixed broadband tariff plans from more than 120 providers across 38 OECD countries.

This is a Device Essentials Plus (DEP) analysis of the IMX591, 0.01 MP resolution, 10.1 µm pixel pitch, stacked back-illuminated direct-time of flight (d-ToF) SPAD sensor from Apple iPhone 15 Pro/Pro Max LiDAR camera.

The Qorvo QM35725 is an Ultra-Wideband (UWB) SoC that has been found in Google GC3VE (Pixel 8 Pro).

The Sony IMX591 is a Time-of-Flight (ToF) sensor used in the LiDAR scanner of the iPhone 15 Pro and Pro Max. The sensor has a resolution of 0.01 megapixels and a pixel pitch of 10.1 microns. The IMX591 die incorporates inverted pyramid structures on the rear side of the CIS active Si, as well as tungsten (W)-filled full depth back deep trench isolation (B-DTI) and composite metal grid (CMG).

TechInsights conducted an evaluation of the infotainment system in the 23MY Range Rover Sport. Land Rover have been striving to add a touch of modernity to their luxury SUV brand image.

Several manufacturers share design Wins for the Roku Streaming Stick 4K+ 3821R2. The main SoC came from Realtek. For this device, Samsung supplied 1 GB LPDDR4 SDRAM. Whereas NAND memory comes from Kioxia and offers 4 GB MLC NAND Flash. Connectivity is supported by Realtek WiFi/BT transceivers.

This report contains the results of the process and circuit analysis of the integrated passive device (IPD) filter die from the Maxscend MXD9122C 5G NR diversity receive (RxD) front end module (FEM). Maxscend Microelectronics Company Limited operates as an electrical component manufacturing company.

This report presents a Power Essentials analysis of the Navitas Semiconductor NV6245C device found in the Baseus 130 W GaN5 Pro Charger. NV6245C, as one of the initial family of GaNSense half-bridge ICs, includes two GaN power high electron mobility transistors (HEMTs) dies and two silicon (Si) gate driver dies.

This is a Memory Floorplan Analysis (MFR) of the TSMC R7F702300B die with a memory capacity of 16 MB and 28 nm HPL technology. Within the eFlash macro, memory sub-arrays take about 69% of the area, while memory array with array peripherals covers about 84% of the macro space.