Qorvo QM35725 UWB SoC (D1QM3572003 die) Floorplan Analysis (IoTB)
The Qorvo QM35725 is an Ultra-Wideband (UWB) SoC that has been found in Google GC3VE (Pixel 8 Pro).
Sony ISP from IMX591, 10.1μm Pixel Pitch, 0.01MP, Stacked Back-Illuminated Direct-Time of Flight (d-ToF) SPAD Sensor Advanced Floorplan Analysis
The Sony IMX591 is a Time-of-Flight (ToF) sensor used in the LiDAR scanner of the iPhone 15 Pro and Pro Max. The sensor has a resolution of 0.01 megapixels and a pixel pitch of 10.1 microns. The IMX591 die incorporates inverted pyramid structures on the rear side of the CIS active Si, as well as tungsten (W)-filled full depth back deep trench isolation (B-DTI) and composite metal grid (CMG).
UX Benchmark: 23MY Range Rover Sport
TechInsights conducted an evaluation of the infotainment system in the 23MY Range Rover Sport. Land Rover have been striving to add a touch of modernity to their luxury SUV brand image.
Deep Dive Teardown of the Roku Streaming Stick 4K+ 2821R2 Streaming Media Stick
Several manufacturers share design Wins for the Roku Streaming Stick 4K+ 3821R2. The main SoC came from Realtek. For this device, Samsung supplied 1 GB LPDDR4 SDRAM. Whereas NAND memory comes from Kioxia and offers 4 GB MLC NAND Flash. Connectivity is supported by Realtek WiFi/BT transceivers.
Maxscend MXD9122C 5G NR RxD FEM IPD Band Pass Filter Die Process Analysis
This report contains the results of the process and circuit analysis of the integrated passive device (IPD) filter die from the Maxscend MXD9122C 5G NR diversity receive (RxD) front end module (FEM). Maxscend Microelectronics Company Limited operates as an electrical component manufacturing company.
Navitas Semiconductor NV6245C 650V 275mΩ E-Mode GaN-on-Silicon HEMT Power Essentials Summary
This report presents a Power Essentials analysis of the Navitas Semiconductor NV6245C device found in the Baseus 130 W GaN5 Pro Charger. NV6245C, as one of the initial family of GaNSense half-bridge ICs, includes two GaN power high electron mobility transistors (HEMTs) dies and two silicon (Si) gate driver dies.
Renesas R7F702300BFABA-C TSMC 28 nm eFlash Memory Floorplan Analysis
This is a Memory Floorplan Analysis (MFR) of the TSMC R7F702300B die with a memory capacity of 16 MB and 28 nm HPL technology. Within the eFlash macro, memory sub-arrays take about 69% of the area, while memory array with array peripherals covers about 84% of the macro space.
UK Handset Vendor Marketshare by Operator: Q3 2023
We estimate 4.9 million handsets were shipped in the UK in Q3 2023, dipping by -9% YoY. Apple maintained its position as the number one handset vendor across all four major UK operators during the quarter, largely boosted by the strong demand of the iPhone 14 / 15 series.