Embark on a journey with TechInsights as we explore the world of Tesla's advanced Full Self-Driving (FSD) driving capabilities.

This briefing features key innovations in the latest new technologies: TSMC 3 nm and Intel 4 nm, and the disruptive SMIC 7 nm N+2, through the lens of digital gates and standard cell libraries. Discover our latest benchmarking on scaling and transistor density metrics of leading flagship SoCs like the Apple A17, HiSilicon Kirin 9010, and MediaTek Dimensity 9200.

The Samsung 1 Tb 236L triple-level-cell (TLC) 3D NAND flash memory device (die markings: K9AKGD8J0B) is one of 16 dies packaged inside one Samsung K9DYGY8J5B-CCK0 NAND flash memory package, which was found in the MZ-V9P4T0 990 Pro PCIe 4.0 NVMe M.2 4 TB solid state drive (SSD).

HiSilicon Kirin 9010 Powers the Huawei Pura 70 Ultra Discover the groundbreaking technology behind Huawei's Pura 70 Ultra smartphone, powered by the innovative HiSilicon Kirin 9010 processor. Delve into our in-depth analysis by the TechInsights team, uncovering the intricacies of the processor and

The Sony LYTIA LYT900 is a rear wide-angle camera module that was extracted from the Oppo Find X7 Ultra (PHY110) smartphone. The camera module measures 27.96 mm × 31.16 mm × 10.68 mm thick. It contains a stacked imager comprising a CIS die and an ISP die. This floorplan analysis (FAR) examines the ISP die.

Global smartphone industry revenues grew by 8% in Q4 2023. Apple, Samsung and Xiaomi were the top three vendors and together accounted for 3/4th of the global revenues. Apple was the leading vendor by revenues in all of the six regions tracked.

We expect mmWave technology to reach 11% penetration of all 5G smartphones in 2023. The majority of sales volumes come from the North American market.

The Huawei Eyewear 2 LFT-G00 are smart glasses that include two speakers in the temples to create a comfortable open-ear audio listening experience without the need for earpieces. It features the WUQI microelectronics WQ7036AX Bluetooth 5.3/Audio SoC with memory.

The Efficient Power Conversion EPC2619 device includes a single gallium nitride (GaN) power high electron mobility transistor (HEMTs) die with a continuous rating voltage of 100 V, the power GaN transistors operate in enhancement mode (normally-off) and exhibit a typical 3.3 mΩ on-resistance (RDS(ON)) at 5 V VGS bias.

The Apple TMQW67 die, examined in this digital floorplan analysis (DFR), was found inside the Apple S9 module. The Apple S9 system-in-package (SiP) module was extracted from the Apple Watch Series 9 GPS+Cellular (A2984).