NAND Memory Technology Micron B47R 3D CTF CuA NAND Die, the World’s First 176L (195T)! Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron 176L 3D NAND

Power Semiconductor Technology Latest SJ-MOSFET Technology, Can It Still Compete with Wide Bandgap? Now both silicon carbide (SiC) and gallium nitride (GaN) products are having an impact in the marketplace, it is easy to think that there is no longer a place for silicon (Si) in power electronics

This week Andrea Lati, Dan Hutcheson, John West, and Risto Puhakka discuss what insiders are saying about the Auto IC shortage and how the 4Q21 Forecast is shaping up.

Provides state-of-the-art equipment, process knowhow, and all-star support to customers in front-end semiconductor manufacturing, back-end wafer level packaging, LED production, MEMS applications, and other semiconductor fabrication processes.

DRAM Memory Technology Disruptive Product: What technology node for 1st DDR5 DIMM? DDR5 is a new generation of Memory! All the major DRAM players are moving forward to a faster DRAM, DDR5. DDR5 improves power management (1.1V vs. 1.2V for DDR4) as well. One of DDR5 DIMM products has been confirmed

As the leading lithography innovator in the chip industry, ASML’s solutions in lithography and process control have been making it possible for chip makers progress in better and faster devices.

ASM Pacific Technology, the world leader in the supply of semiconductor assembly and packaging equipment, awarded 4 VLSI Stars with a solid 8.47.

DRAM Memory Technology Micron D1α, '14 nm'! The Most Advanced Node Ever on DRAM! D1α! It’s 14 nm! After a quick view on Micron D1α die (die markings: Z41C) and cell design, it’s the most advanced technology node ever on DRAM. Further, it’s the first sub-15nm cell integrated DRAM product. Micron Z41C

The battle for EUV lithography machines is gradually intensifying.