Samsung Exynos 2500 (3nm) CMOS Process Analysis

This report analyzes the Samsung Exynos 2500, detailing its 3 nm GAA transistor technology and the materials used in its FEOL, MOL, and BEOL structures.

This report provides an analysis of the structure and materials used in the manufacture of Samsung Exynos 2500, manufactured using Samsung 3 nm process (SF3 gen2), featuring gate-all-around (GAA) transistors, referred to as multi-bridge-channel field-effect transistors (MBCFET). The report includes a summary of key findings, and a detailed look at the FEOL, MOL and BEOL structures and materials used. Extensive SEM, TEM and materials analysis provide a complete look at how this device was manufactured.