Samsung 12Hi HBM from AMD MI350X Floorplan Analysis
1 Min Read Oct 8, 2025
Discover Samsung’s HBM3E Shinebolt with 32 GB memory, 12% higher efficiency, and 1,250 GB/s performance.
The Samsung HBM3E Shinebolt is the fifth generation of the Samsung’s HBM product. It uses Through-Silicon Via (TSV) technology stacks 12 layers of D1a nm high-k metal gate 24 Gb DRAM dies at the top of a logic base die to achieve 32 GB of memory. This is 1.5 times more memory than the previous generation. The power efficiency is improved by 12% compared to HBM3 and the data rate is 9.8Gbps per pin, which gives a 1,250GB/s of performance speed.
