Infineon IPW60R016CM8 600 V 16 mΩ CoolMOS 8 SJ-MOSFET Power Essentials
Explore Infineon's IPW60R016CM8 CoolMOS™ 8 SJ-MOSFET—600 V, 13 mΩ RDS(ON), 123 A—designed for high-efficiency, compact power switching applications.
The IPW60R016CM8, officially released in October 2023, features a 600 V N-channel silicon (Si) SJ-MOSFET die from Infineon’s 600 V CoolMOS™ 8 series, succeeding the 600 V CoolMOS™ 7 MOSFET family, and is designed for high-efficiency switching applications. With a typical source/drain (S/D) on-resistance (RDS(ON)) of 13 mΩ at 10 V VGS bias and a high current capability of up to 123 A at 25°C, showing improvements in all areas even compared to the optimization-specific CoolMOS 7 products, it effectively minimizes conduction and switching losses, enabling compact and energy-efficient designs.
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