Samsung K4UBE3S4AM-MGCL D1z 16Gb LPDDR4X DRAM Memory Floorplan Analysis

The Samsung K4U6E164AM die was found inside Samsung K4UBE3S4AM-MGCL package that features two 16 Gb LPDDR4X dies. The K4U6E164AM die was manufactured by Samsung using its 1y nm generation stacked DRAM CMOS process incorporating bit line under capacitors and a buried word line forming the gate of the buried cell array transistor (BCAT). The K4U6E164AM die has 16 memory arrays arranged into two rows with a peripheral circuit block sitting in between. Based on the layout arrangement on the die, the arrays are put into 8 banks, each consists of two arrays.