Infineon 2ED1322S12M 1200 V Half-Bridge SOI Driver PMIC Essentials
Explore the Infineon 2ED1322S12M 1200 V driver IC with SOI technology. This report analyzes its die process and compares it with other power MOSFETs using SOI-BCD technology.
As one of new EiceDRIVER™ 1200 V half-bridge driver IC family, the Infineon 2ED1322S12M, announced on April 27, 2023, features unique Infineon thin film silicon-on-insulator (SOI) technology, high voltage and current capabilities, ultra-fast overcurrent protection, integrated low resistance (30 Ω) bootstrap diode, dead-time and shoot-through prevention, and robust ESD protection [1]. The detailed process features of die has been analyzed in this report and compared with other selected power MOSFETs using the SOI-BCD process technology.
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