Nexperia NSF040120L3A0 1200V 40mΩ N-channel SiC Power MOSFET Power Essentials Analysis
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This report presents a Power Essentials analysis of the Nexperia NSF040120L3A0 silicon carbide (SiC) power MOSFET. The NSF040120L3A0 power package features a N-channel 1200 V SiC power MOSFET device which provides a maximum continuous source/drain (S/D) current of 65 A (at T = 25 °C) and a 40 mΩ typical S/D ON-resistance (RDS(ON)) and is designed for high power and high voltage industrial applications.
