Samsung ISP from the S5KHPXSP, 1/1.4”, 200MP, 0.56μm Pixel Pitch, Back-Illuminated, ISOCELL Tetra2pixel, and Super QPD CMOS Image Sensor Advanced Floorplan Analysis
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This report analyzes Samsung HPX as the most recent release of the HP line of image sensors extracted from Xiaomi Redmi Note 12 Pro+ smartphone’s rear-facing wide-angle camera module (former counterparts HP2 and HP3 were found in Samsung galaxy S23 and Honor 80 Pro smartphones’ rear-facing wide-angle camera modules, respectively). A double ramp generator was found in HPX to making it substantially notable from column readout, column ADC circuit point of view as opposed to the single ramp generator in the HP1. The HP3 and HPX modules, while having different package markings, use the same 200 MP resolution 0.56 microns pixel pitch stacked back-illuminated CIS, where they were built upon identical ISP dies as well. It is noteworthy that all the ISP dies in HP sensors, including the die investigated in this report, have used Samsung’s 28 nm CMOS process.
