Toshiba released their 64L NAND solution (BiCS FLASH) in a SanDisk Ultra 3d SSD in 2017. TechInsights has conducted a significant amount of analysis on this product, including the following highlights:

• Memory density reached up to 3.40 Gb/mm², which is 40% increased from their 48L TLC
• Memory array efficiency still kept 70% on a die
• 64L 256 Gb die size is shrunk to 75.2 mm2 from 105.4 mm² (48L 256 Gb die)
• Different NAND cell layouts including 8 strings additionally with one dummy strings for every CSL
• 19 nm BL half pitch used
• 73 Gates stacked including selectors, active and dummy wordlines
• Improved memory peripheral design and circuits

There are many reasons this device caught our attention, and we have conducted a great deal of analysis on it. We are offering the reports defined below about the Samsung 64L 3D V-NAND, as well as information available through our various subscription products and tools.