Power Semiconductors for Space Applications – Wide Bandgap Focus

Explore the advantages of wide-bandgap power semiconductors for space, featuring GaN and SiC devices, plus insights on radiation-hardened gate drivers.

Wide-bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) can be inherently suited for space applications. Currently, there are already GaN power semiconductor devices being offered for space applications, while SiC power semiconductor devices have been receiving attention as a suitable technology as well. Regardless of the power semiconductor technology used, a space-suitable gate driver is also required. This featured content looks at the additional considerations for semiconductor devices in space applications, discussed the suitability of WBG devices for space applications, and presents selected results from our recent analysis of the Efficient Power Conversion (EPC) EPC7019GC 40 V radiation-hardened GaN HEMT, as well as Texas Instruments TPS7H6003 200 V radiation-hardened GaN FET driver, which is claimed to be the industry's first space grade GaN FET driver to operate at 200 V.