Winbond JAA123 Die (within W664GG6RB-06 Package) 20 nm 4 Gb DDR4
2 Min Read June 20, 2025
Detailed DPA of Winbond JAA123 die from W664GG6RB-06 package. Features 4 Gb DRAM built on 20 nm CMOS, 2nd-gen of Winbond’s stacked DRAM technology.
This DPA report of the Winbond JAA123 die includes detailed analysis of the DRAM array. The Winbond JAA123 die is extracted from the Winbond W664GG6RB-06 package. The JAA123 die is fabricated using 20 nm stacked DRAM CMOS process with a 4 Gb capacity. It is the second generation of Winbond's 20 nm DRAM technology family.
