Samsung K4K6E165YE D1b 16Gb LPDDR5X Process Analysis
Explore the final Advanced Memory Essentials analysis of the Samsung K4K6E165YE die, its specifications, manufacturing details, and comparison to industry peers.
The Samsung K4K6E165YE die was found inside the Samsung K3KL5L50EM-BGCZ package, which was extracted from the Vivo X200 Pro 5G V2405DA smartphone. The K3KL5L50EM-BGCZ package features eight D1b 16 Gb LPDDR5X dies with 446.67 Mb/mm2 bit density. The K4K6E165YE die was manufactured by D1b nm generation with high-k metal gate (HKMG) for periphery transistors. The cell size is smaller than Micron D1β, while it is similar to SK hynix D1b cell size. This report presents a final Advanced Memory Essentials (AME) analysis of the K4K6E165YE die.
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