Fujitsu MB85AS12MT 40 nm 12 Mb ReRAM Advanced Memory Essentials
Discover the 12 Mb Fujitsu MB85AS12MT ReRAM die within the MB85AS12MTPW-EAERE1 package. Our report covers key metrics, TEM-EDS, TEM-EELS results, and detailed imaging.
The Fujitsu MB85AS12MT die was found inside the Fujitsu MB85AS12MTPW-EAERE1 package. The Fujitsu MB85AS12MT die is fabricated using Fujitsu 40 nm with resistive random-access memory (RRAM/ReRAM) process. This is the third-generation ReRAM with the largest capacity of 12 Mb from Fujitsu.
The Fujitsu MB85AS12MT die comprises 12 Mb of ReRAM. The ReRAM is a type of non-volatile memory that works by changing the resistance across a metal-oxide dielectric, sandwiched between two electrodes. With multiple resistive states, which can correspond to multiple memory states.
This Advanced Memory Essentials (AME) report of the Fujitsu MB85AS12MT die includes the concise analyst’s summary of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features supported by the image folders.
