Micron Y52K D1β 16 Gb DDR5 DRAM Transistor Characterization
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This report presents Key DC characteristics for NMOS and PMOS transistors located in the word line drivers and sense amplifiers regions of the Micron Technology Y52K die found inside the Micron Technology MT60B4G4RZ-56B:D DDR5 SDRAM package extracted from a Micron Technology MTC40F2046S1RC56BD1 64 GB DDR5 SDRAM module. The Micron Technology MTC40F2046S1RC56BD1 64 GB DDR5 module is a 5600MHz 288-pin Low Profile ECC Registered Dual Inline Memory Module (RDIMM), containing 40 of the Micron Technology MT60B4G4RZ-56B:D BGA packages. The Micron Technology MT60B4G4RZ-56B:D BGA package measures 11.00 mm × 7.50 mm × 0.71 mm thick and has 78 solder balls, placed with a pitch of 0.8 mm. The Micron Technology MT60B4G4RZ-56B:D package contains a single 16 Gb DDR5 SDRAM die. The 16 Gb DDR5 SDRAM (Y52K) die measures 6.33 mm × 5.66 mm (35.83 mm2) as measured from the die seals or 6.35 mm × 5.67 mm (36.00 mm2) for the full die. The die features seven BEOL metal (2 W, 4 Cu, 1 Al), W-filled via 1, via 2 and via 6, Cu-filled via 3 to via 5, plus one thick aluminium RDL layer. Electrical measurements of the word line drivers and sense amplifiers transistors for the Y52K die were performed in a scanning electron microscopy (SEM) based environment using Kleindiek Nanotechnik probing system and a Keithley 4200A-SCS semiconductor characterization system. Transistors were measured at 85º C.
