Toshiba TH58LKT3V46BA8S (KIOXIA/Western Digital Corp. FXZ0_1T die) 162-Layer 3D NAND Flash Memory Advanced Memory Essentials

Toshiba TH58LKT3V46BA8S (KIOXIA/Western Digital Corp. FXZ0_1T die) 162-Layer 3D NAND Flash Memory Advanced Memory Essentials

 
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This is an Advanced Memory Essentials (AME) summary document of the Toshiba TH58LKT3V46BA8S (KIOXIA/Western Digital Corporation FXZ0_1T die).

This sixth-generation 3D flash memory based on the bit cost scalable flash technology (BiCS6) features advanced architecture beyond conventional eight-stagger memory hole array. This lateral scaling advancement, in combination with 162 layers of stacked vertical memory, enables a 40% reduction in die size compared to the 112-layer stacking technology, optimizing cost. Circuit Under Array CMOS placement and four-plane operation, which together deliver nearly 2.4 times improvement in program performance and 10% improvement in read latency compared to the previous generation. I/O performance also improves by 66%.

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