HiSilicon Kirin 9000s (SMIC 7nm, n+2) Transistor Characterization Analysis
Share This Post
This report presents key DC electrical characteristics for logic NMOS and PMOS transistors located in the CPU1 region of the HiSilicon Kirin 9000s, Hi36A0 GFCV120 application processor die. The HiSilicon Kirin 9000s application processor was extracted from the Huawei Mate60 Pro Smartphone. The Huawei Mate 60 Pro is Huawei’s newest flagship smartphone, launched September 03, 2023. The Huawei Mate 60 Pro is powered by the Kirin 9000S SoC mobile processors, manufactured using SMIC (N+2) 7 nm finFET high-k metal gate (HKMG) CMOS process. The phone features a 6.82-inch LTPO OLED display with 120 Hz variable refresh rate and is equipped with a triple lens rear camera system with a 50 MP main sensor, a 64 MP ultrawide sensor and a 64 MP telephoto sensor with optical zoom. The HuaweiMate 60 Pro runs on the HarmonyOS 4.0 operating system and supports 5G, Wi-Fi 6E, Bluetooth 5.3, and NFC. The Huawei Mate 60 Pro also features a 5500mAh battery that supports 100W wired charging and 65W wireless charging.
The HiSilicon Kirin 9000s Hi36A0 GFCV120 component measures 14.52 mm ×14.20 mm ×0.58 mm thick package-on-package (PoP), flip-chip ball grid array (FCBGA) and contains the Hi36A0 GFCV120 processor and a DRAM package. The Hi36A0 GFCV120 processor die was manufactured on 300 mm wafers by SMIC, using N+2 7 nm finFET high-k metal gate (HKMG) CMOS process with a 6T library and single diffusion break (SDB) without dummy gate. The back-end of line (BEOL) features a total of 13 metal interconnect layers, including 12 levels of copper (Cu) and a top aluminum (Al) layer. The Hi36A0 GFCV120 processor die measures 10.50 mm × 10.23 mm as measured from the die seals, or 10.66 mm × 10.39 mm for the full die.
