Innoscience INN040W048A 40 V Bi-Directional 4.8 mΩ GaN-on-Silicon Enhancement Mode HEMT from OnePlus Ace 2 Power Essentials

Innoscience INN040W048A 40 V

 
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This report presents a power essentials summary (PEG) of the Innoscience INN040W048A 40 V Bi-Directional 4.8 mΩ GaN-on-Silicon Enhancement Mode HEMT, extracted from the OnePlus Ace 2 smartphone.

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