This report presents an Exploratory Analysis on the DRAM die found in the rear camera module extracted from a Sony Xperia XZs (model G8232) smartphone. The Sony IMX400 rear camera module is triple-die stacked including the DRAM, a 19 megapixel (MP) back illuminated (BI) CMOS image sensor (CIS), and image signal processor (ISP) dies. The DRAM die is manufactured using stacked DRAM process, with capacitor-over-bit line DRAM cell arrays, tungsten (W) based buried word line (WL), and four interconnect layers consisting of W and three aluminum (Al) layers and connected to ISP and CIS dies using backside Cu redistribution layer and through silicon vias (TSV).