This report contains the following detailed information:
- Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
- Scanning electron microscopy (SEM) cross-sectional micrographs through the bit line (BL) showing the general structure of the DRAM cell array, die dielectric materials, and major features
- SEM bevel through the memory array showing the active, bit, and word line level plan-view features
- Plan-view optical micrograph of the die delayered to the polysilicon layer
- Identification of major functional blocks on a polysilicon die photograph
- Table of functional block sizes and percentage die utilization
- High-resolution top metal and polysilicon die photographs delivered in the CircuitVision software
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