This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the Micron Technology MT40A1G8SA-062E DDR4 SDRAM die. This report presents key DC electrical characteristics for NMOS and PMOS transistors located in the sense amplifier and word line driver regions of the Micron Technology MT40A1G8SA-062E DDR4 SDRAM die.The MT40A1G8SA-062E is classified as a 1x nm (19 nm process node technology device, using half the minimum pitch in the chip). The die is manufactured using a four-metal, one polysilicon CMOS (copper (Cu)) process (one tungsten (W), two Cu, and one aluminum (Al) interconnect levels), including Al bond pads and wire bonds.