Samsung 12Hi HBM from AMD MI350X Interconnect and Packaging Analysis

Discover key insights into Samsung’s HBM3E packaging used in the AMD Instinct MI350X, revealing advanced stacking and integration that power next-generation AI and HPC performance.

This report provides deep insights into the advanced packaging innovation employed in the manufacturing of Samsung’s high bandwidth memory 3 extended (HBM3E), as found in the AMD Instinct MI350X AI accelerator. Development of high-bandwidth memory architecture has been propelled to the forefront of high-performance computing (HPC) by artificial intelligence (AI), requiring vast amounts of training data, necessitating high capacity and high bandwidth memory access closely integrated with the processing cores. Reduction of DRAM die thickness compared to Samsung HBM3 enables an increased number of stacked dies to a total of 13 (12 DRAM + 1 logic base die).