Micron B68S 2yyL 1 Tb TLC 3D NAND Full Process Analysis
2 Min Read August 11, 2025
A NAND Full Process Essentials (NPF) report of the Micron B68S. Dies extracted from Micron MT29F8T08EQLEHL5-36QA_E NAND flash packages.
The Micron B68S die features Micron's seventh-generation (fourth-generation of charge trap flash) 276-layer (276L) triple-level cell (TLC) 3D NAND flash memory. The dies were extracted from Micron MT29F8T08EQLEHL5-36QA_E NAND flash packages, which were contained within the Crucial P510 solid state drive (SSD), which was released in January 2025.
This NAND Full Process Essentials (NPF) report of the Micron B68S includes a concise analyst’s summary of critical device metrics, transmission electron microscopy-based energy dispersive X-ray spectroscopy (TEM-EDS) and/or TEM-based electron energy loss spectroscopy (TEM-EELS) results, and salient features supported by the following image folders.
