Nanya 1B nm 16Gb DDR5 DRAM Full Process Essentials
2 Min Read August 1, 2025
Advanced Memory Essentials analysis of Nanya DDR5 NT5FF2048M8A3-Q5 die reveals 16Gb DRAM built on 2nd-gen 10nm stacked CMOS process.
An Advanced Memory Essentials (AME) analysis report of the Nanya DDR5 DRAM die found inside the Nanya NT5FF2048M8A3-Q5 package. The NT5FF2048M8A3-Q5 package was extracted from the Nanya NT16GF64F88AX3F-Q54 16 GB DDR5 UDIMM card.
The Nanya NT5FF2048M8A3-Q5 component is a DDR5 SDRAM BGA board-on-chip (BOC) package that measures 11.0 mm × 10.1 mm × 0.7 mm thick, with 82 solder balls attached to the top side of the printed wiring board (PWB). The NT5FF2048M8A3-Q5 package features a single 16 Gb DDR5 die. The die is wire bonded and connected to the package substrate PWB.
The DRAM die, NT5FF2048M8A3-Q5_die, was manufactured by Nanya using its D1B nm generation stacked DRAM CMOS process with poly gate for periphery transistors. The DIB process is Nanya's second-generation 10 nm class process technology.
