KIOXIA FXZ5_512G 162L 512 Gb TLC 3D NAND Transistor Characterization
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The Toshiba TH58LKT2V46BA8S TLC 3D NAND flash is a 154-ball grid array (BGA), multi-chip package (MCP), measuring 13.5 mm × 11.5 mm × 0.9 mm thick, including solder balls. The TH58LKT2V46BA8S contains eight stacked KIOXIA 162-layer FXZ5 512G dies, arranged in two side by side four die stacks. Bond wires connect the two die stacks to the two wider sides of the printed wiring board (PWB). The FXZ5 512G die is manufactured using a 162-layer 3D TLC NAND CMOS process with circuit under array. The die measures 12.25 mm × 4.03 mm (49.37 mm2) as measured from the die seal, or 12.30 mm × 4.09 mm (50.31 mm2) for the full die. There are 62 bond pads arranged along one of the wider edges of the die. Transistor measurements on the KIOXIA 162-layer FXZ5 512G die were performed in a scanning electron microscope (SEM) based environment using a Kleindiek Nanotechnik probing system and a Keithley 4200 (SCS) semiconductor characterization system. The transistors were measured at 85°C.
