Exploring Beyond Datasheets: Assessing and Evaluating the Performance of SiC FETs
Comparative Analysis and Insights by Dr Stephen Russell (Subject Matter Expert, Power Devices, TechInsights)
Discover the vital role of electrical characterization in design and gain deeper insights into SiC FET performance beyond mere datasheets. Our eBook presents a meticulous analysis of two cutting-edge SiC FETs, showcasing their electrical characteristics under identical conditions. With a comprehensive range of test scenarios and additional valuable insights, we explore their resilience under stress, providing invaluable information that transcends conventional datasheet specifications.
Exploring Beyond Datasheets eBook
What You'll Discover
Devices’ Active Structure for the Toshiba and UnitedSic FETs
Output and Transfer Characteristics
On-Resistance with Current and Temperature
3rd Quadrant Operation and Switching Set-up
Register now to access our FREE ebook, and take an in-depth look at two Silicon Carbide devices and their electrical characterization.
Exploring Beyond Datasheets: Assessing and Evaluating the Performance of SiC FETs
Table of Contents
Active Device Structure
Learn the unique structural features of Toshiba MOSFET and UnitedSiC JFET, including their gate layouts and vertical pillar structure. Understand how these devices are co-packaged with a Si MOSFET in a cascode arrangement to achieve 'normally-off' operation.
Output Characteristics
Explore potential factors like heating effects and current constriction, considering pulse duration's impact on device behavior.
Analyzing Transfer Characteristics
Learn to interpret and compare transfer characteristics of two devices, understanding the stark differences in current response and turn-on behavior.
On-Resistance Variation with Current and Temperature
Understand the differences in turn-on behavior and saturation levels between the UnitedSiC device and its counterpart.
