TI TPS7H6003 200 V Radiation-Hardened GaN FET Gate Driver PMIC & Pkg

Boost satellite power efficiency with the TPS7H6003 — the first space-grade, radiation-hardened 200 V GaN FET gate driver offering precise control, robust packaging, and exceptional radiation tolerance.

The TPS7H6003 from Texas Instruments is the industry's first space-grade, radiation-hardened 200 V GaN FET gate driver, engineered to enhance the efficiency and reduce the size of satellite power systems. It supports both PWM and independent input modes, features adjustable dead time, and offers split-gate outputs for precise switching control. Housed in a robust 48-pin ceramic flatpack (CFP) package, it ensures excellent thermal performance and mechanical resilience. With radiation tolerance up to 100 krad(Si) and immunity to single-event effects up to 75 MeV·cm²/mg LET, the TPS7H6003 is well-suited for the demanding conditions of space applications.