Silan SCDP120R013N2P4B 1200V 13.5mΩ SiC MOSFET Power Essentials
2 Min Read November 26, 2025
The Silan SCDP120R013N2P4B is a 1200 V SiC MOSFET ideal for high-efficiency applications like EV inverters and solar converters, with low on-resistance of 13.5 mΩ.
The Silan SCDP120R013N2P4B is a 1200 V silicon carbide (SiC) MOSFET designed for high-efficiency, high-power applications, with potential applications in EV inverters, solar converters, and industrial power supplies. It features a typical on-resistance of 13.5 mΩ (VGS = 15 V), which should result in reduced conduction losses.
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