Samsung 8Gb GDDR7 K4V80165ZC Floorplan Analysis
2 Min Read May, 7, 2025
Access a floorplan analysis of the Samsung K4V80165ZC die. Learn about its layout, critical dimensions, and salient features.
Samsung K4V80165ZC die was found inside Samsung K4VAF325ZC-SC28 package that features two 8 Gb GDDR7 dies. The K4V80165ZC die was manufactured by Samsung using its 1z nm generation stacked DRAM CMOS process, incorporating bit line under capacitors and a buried word line forming the gate of the buried cell array transistor (BCAT). The K4V80165ZC die has its memory arrays arranged into upper and lower array areas with a central peripheral circuit block sitting in between. Based on the layout arrangement on the die, the arrays are put into 16 banks, each consisting of four memory arrays.
