Samsung 176L QLC 3D NAND Internal
Waveform Analysis
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This report presents an Internal Waveform Overview containing the program, read, and erase waveforms of the Samsung 176L 1 Tb QLC 3D NAND flash memory device (die markings: K93KGO8J0C).
This device was found on the Samsung MU-PH4T0S T5 EVO portable SSD. Two Samsung K9YYGB8J1C-CCK0 NAND flash memory packages, SSD controller, DRAM, USB controller, PMIC, and serial flash are identified on the SSD board. There are 16 NAND dies along with two “frequency boosting interface” (FBI) dies packaged inside each Samsung K9YYGB8J1C-CCK0 package. The Samsung 176L 1 Tb QLC NAND die is built with cell over peripheral (COP) structure and contains six levels of metallization, three levels below and three levels above the memory array.
This analysis provides an overview of the internal voltages required to program, read, and erase the flash memory cells. The waveform analysis tests the flash in an active probe arrangement and voltage traces of the signals are recorded during program, read and erase operations while the device is active on the source Samsung SSD. The SSD operated in SLC, TLC and QLC modes while performing the signal measurements. The measured signals are four global wordlines randomly selected from a group of circuit test pads/points identified on the top layer of the flash die near the wordline switch circuitry. Focused ion beam (FIB) probe pads are placed on the signals on one memory plane of one flash die in the memory package to measure the signals.
