NXP GD3162 Galvanically Isolated SOI Auto Gate Driver PMIC and Package

Unlock high-voltage performance with the NXP MGD3162AM551EK—a gate driver featuring 8 kVrms isolation, dynamic control, and advanced protection for SiC-based xEV traction inverters.

The NXP MGD3162AM551EK (GD3162) is a high-performance, galvanically isolated gate driver optimized for driving SiC MOSFETs and IGBT modules, particularly in xEV traction inverters. A standout feature of this device is its integrated galvanic isolation, providing up to 8 kVrms, which safeguards sensitive control circuitry from high-voltage disturbances. This isolation is achieved through inductors on the two stacked dies, where paired inductors form a transformer to transfer signals magnetically, ensuring no physical electrical connection.

Beyond isolation, the MGD3162AM551EK offers dynamic gate drive strength control, advanced protection features including overtemperature, desaturation, and current sense protection, and is fully AEC-Q100 grade 1 qualified, making it ideally suited for automotive and other high-reliability applications.