This report presents a Structural Analysis of the XPoint memory die extracted from the Intel 29P16B1BLDNF2 device. The 3D XPoint memory is a first-of-its-kind non-volatile memory (NVM). The XPoint memory cell is in a cross-point array, stacked on the substrate with CMOS circuits, in a CMOS under array (CUA) configuration. Each 3D XPoint memory cell uses a PCM-based storage cell in series with an OTS-based selector device.

This report contains the following detailed information:

• Selected downstream and teardown photographs
• Package photographs, package X-ray, die markings, and die features
• Die utilization analysis, including an annotated gate level die photograph and functional block measurements
• Selected layout feature analysis including metal, via, and gate structures, and memory cell layout
• Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses of the dielectrics, metals, vias and contacts, transistors, isolation, and major structural features
• High-angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) analyses of the transistor gate, gate dielectric, and S/D material
• Critical dimensions of the die features
• TEM-based energy dispersive spectroscopy (TEM-EDS) and electron energy loss spectroscopy (EELS) analyses of the dielectrics, metals, and transistors
• Scanning capacitance microscopy (SCM) and secondary ion mass spectrometry (SIMS) analyses of the wells and substrate