TechInsights finally found Avalanche 40 nm pMTJ STT-MRAM device and just launch a deep analysis on it. STT-MRAM is still a promising new memory technology with very desirable properties including a very high (more than 20 year) endurance. STT-MRAM devices have been developed and commercialized with in-plane MTJ (i-MTJ) or perpendicular MTJ (p-MTJ) type from many of the MRAM players such as Samsung, Sony, Everspin, Avalanche, Renesas, TSMC, UMC and Intel (Figure 1, MRAM/STT-MRAM Technology & Product Roadmap)

The STT-MRAM cell design and structure used on Renesas M3008204 Serial Peripheral Interface Persistent Memory (Avalanche die marked as shown in Figure 2 and 3) show 40 nm p-MTJ layers with 0.032 µm2 cell size. The MRAM layer placed under M1 source line, between Contact-1 and Contact-2, which is quite unique compared with Samsung’s and Everspin’s. Table 1 shows a briefly summary and comparison of the MRAM technology.